The Japan Society of Applied Physics

13:00 〜 15:00

[PS-4-23] Effect of Post-metallization Annealing on Interface Properties of Al2O3/GaN Fabricated on c- and m-plane Free-standing GaN Substrates

Y. Ando1, T. Nakamura2, M. Deki2, N. Taoka1, A. Tanaka2,3, H. Watanabe2, M. Kushimoto1, S. Nitta2, Y. Honda2, H. Amano2,3,4,5 (1.Dept. of Electronics, Nagoya Univ. (Japan), 2.IMaSS, Nagoya Univ. (Japan), 3.NIMS (Japan), 4.ARC, Nagoya Univ. (Japan), 5.VBL, Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.PS-4-23