13:00 〜 15:00

[PS-4-26 (Late News)] Modeling of the Leakage Current in GaN mediated through the Dislocation-Impurity Complex

^○Y. Harashima¹, T. Nakano², A. Oshiyama¹, K. Shiraishi^1,2 (1.IMaSS, Nagoya Univ. (Japan), 2.Department of Eng., Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.PS-4-26