1:00 PM - 3:00 PM

[PS-8-15] Sensitivity study on different gate dielectric dependence of DG-CNTFET using atomistic simulation NEGF approach

^○C. Pandy¹, R. Narayanan², H. Mimura¹ (1.Shizuoka Univ. (Japan), 2.VIT Univ. (India))

https://doi.org/10.7567/SSDM.2019.PS-8-15