The Japan Society of Applied Physics

13:00 〜 15:00

[PS-8-16] Fabrication of MoS2 layers on free-standing GaN for heterojunction photoresponsive device applications

P. Desai1, A.K. Ranade1, R.D. Mahyavanshi1, M. Tanemura1, G. Kalita1,2 (1.Nagoya Inst. of Tech. (Japan), 2.Frontier Res. Inst. for Material Sci. (Japan))

https://doi.org/10.7567/SSDM.2019.PS-8-16