Fabrication of MoS<sub>2</sub> layers on free-standing GaN for heterojunction photoresponsive device applications

P. Desai

doi:https://doi.org/10.7567/SSDM.2019.PS-8-16

1:00 PM - 3:00 PM

[PS-8-16] Fabrication of MoS₂ layers on free-standing GaN for heterojunction photoresponsive device applications

^○P. Desai¹, A.K. Ranade¹, R.D. Mahyavanshi¹, M. Tanemura¹, G. Kalita^1,2 (1.Nagoya Inst. of Tech. (Japan), 2.Frontier Res. Inst. for Material Sci. (Japan))

https://doi.org/10.7567/SSDM.2019.PS-8-16

2019 International Conference on Solid State Devices and Materials

[PS-8-16] Fabrication of MoS2 layers on free-standing GaN for heterojunction photoresponsive device applications

[PS-8-16] Fabrication of MoS₂ layers on free-standing GaN for heterojunction photoresponsive device applications