Thickness Effect of SiGe Layers on SiGe/Si Quantum Well Based Thermistor Performance

C.B. Kaynak

doi:https://doi.org/10.7567/SSDM.2019.PS-9-04

13:00 〜 15:00

[PS-9-04] Thickness Effect of SiGe Layers on SiGe/Si Quantum Well Based Thermistor Performance

^○C.B. Kaynak¹, Y. Yamamoto¹, A. Goeritz¹, F. Teply¹, M. Stocchi¹, M. Wietstruck¹, Y. Gurbuz², M. Kaynak^1,2 (1.IHP-Leibniz-Institut fuer innovative Mikroelektronik (Germany), 2.Sabanci Univ. (Turkey))

https://doi.org/10.7567/SSDM.2019.PS-9-04

2019 International Conference on Solid State Devices and Materials

[PS-9-04] Thickness Effect of SiGe Layers on SiGe/Si Quantum Well Based Thermistor Performance