11:01 〜 11:03

[PS-1-09] Ge nMOSFETs with GeOx Passivation Formed by 450℃ Oxygen RTA Postoxidation

^○Y. Xu¹, H. Wang¹, G. Han¹, Y. Liu¹, J. Zhang¹, Y. Hao¹ (1.Xidian Univ. (China))