Ge nMOSFETs with GeOx Passivation Formed by 450℃ Oxygen RTA Postoxidation

2019 International Conference on Solid State Devices and Materials

Sep 2, 2019 - Sep 5, 2019
Nagoya University

11:01 AM - 11:03 AM

^○Y. Xu¹, H. Wang¹, G. Han¹, Y. Liu¹, J. Zhang¹, Y. Hao¹ (1.Xidian Univ. (China))