Memory window and retention time of double back gate Z<sup>2</sup>-FET

Y. Kim

2019 International Conference on Solid State Devices and Materials

2019年9月2日〜 2019年9月5日
Nagoya University

11:19 〜 11:21

[PS-1-18] Memory window and retention time of double back gate Z²-FET

^○Y. Kim¹, S. Kwon², F. Gamiz³, P. Galy⁵, S. Cristolovenau⁴ (1.KIST (Korea), 2.Univ. of Hanyang (Korea), 3.Univ. of Granada (Spain), 4.INPG (France), 5.STMicron (France))

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2019 International Conference on Solid State Devices and Materials

[PS-1-18] Memory window and retention time of double back gate Z2-FET

[PS-1-18] Memory window and retention time of double back gate Z²-FET