Enhanced Electrical Performance and Reliability of Ti-IGZO Thin-Film Transistors with Hf<sub>x</sub>Al<sub>1-x</sub>O Gate Dielectrics

J.H. Wu

10:45 〜 10:47

[PS-10-01] Enhanced Electrical Performance and Reliability of Ti-IGZO Thin-Film Transistors with Hf_xAl_1-xO Gate Dielectrics

^○J.H. Wu¹, B.C. You¹, S.J. Wang^1,2, R.M. Ko², C.E. Lin¹ (1.Institute of Microelectronics, Dept. of Electrical Engineering, National Cheng Kung Univ., Tainan (Taiwan), 2.College of Electrical Engineering and Computer Science, National Cheng Kung Univ., Tainan (Taiwan))

2019 International Conference on Solid State Devices and Materials

[PS-10-01] Enhanced Electrical Performance and Reliability of Ti-IGZO Thin-Film Transistors with HfxAl1-xO Gate Dielectrics

[PS-10-01] Enhanced Electrical Performance and Reliability of Ti-IGZO Thin-Film Transistors with Hf_xAl_1-xO Gate Dielectrics