Fabrication of 4H-SiC PiN Diodes on Substrate Grown by HTCVD Method

Y. Tokuda

2019 International Conference on Solid State Devices and Materials

2019年9月2日〜 2019年9月5日
Nagoya University

10:51 〜 10:53

[PS-4-04] Fabrication of 4H-SiC PiN Diodes on Substrate Grown by HTCVD Method

^○Y. Tokuda¹, H. Uehigashi¹, K. Murata², H. Tsuchida² (1.DENSO CORP. (Japan), 2.Central Research Institute of Electric Power Industry (CRIEPI) (Japan))

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