Fermi Level Pinning at Metal/4H-SiC Contact Induced by SiC<sub>x</sub>O<sub>y</sub> Interlayer

K. Hashimoto

10:55 AM - 10:57 AM

[PS-4-06] Fermi Level Pinning at Metal/4H-SiC Contact Induced by SiC_xO_y Interlayer

^○K. Hashimoto¹, T. Doi¹, S. Shibayama¹, O. Nakatsuka^1,2 (1.Graduate School of Eng. Nagoya Univ. (Japan), 2.Inst. of Materials and Systems for Sustainability, Nagoya Univ. (Japan))

2019 International Conference on Solid State Devices and Materials

[PS-4-06] Fermi Level Pinning at Metal/4H-SiC Contact Induced by SiCxOy Interlayer

[PS-4-06] Fermi Level Pinning at Metal/4H-SiC Contact Induced by SiC_xO_y Interlayer