Synchrotron X-ray Photoelectron Spectroscopy on interface state densities of CVD-Grown SiO<sub>2</sub>/4H-SiC Sturcures Treated by Post-Deposition Treatments

11:03 〜 11:05

[PS-4-10] Synchrotron X-ray Photoelectron Spectroscopy on interface state densities of CVD-Grown SiO₂/4H-SiC Sturcures Treated by Post-Deposition Treatments

^○A. Kiyoi¹, T. Suwa², K. Kawase¹, A. Teramoto² (1.Mitsubishi Electric Corp. (Japan), 2.Tohoku Univ. (Japan))