11:05 〜 11:07

[PS-4-11] Improved vertical Schottky barrier diodes characteristics by eliminating killer defects in heavily B-doped diamond substrates

^○A. Kobayashi¹, S. Ohmagari², D. Takeuchi², H. Umezawa², T. Saito¹ (1.Osaka Prefecture Univ. (Japan), 2.AIST (Japan))