Characterization of defects in diamond PiN diodes by electron beam induced current

H. Umezawa

11:09 AM - 11:11 AM

[PS-4-13] Characterization of defects in diamond PiN diodes by electron beam induced current

^○H. Umezawa^1,2, T. Shimaoka³, K. Driche⁴, E. Gheeraert^2,5, S. Koizumi³, D. Takeuchi¹ (1.AIST (Japan), 2.Univ. Grenoble Alpes, CNRS, Grenoble INP, Inst. Neel (France), 3.NIMS (Japan), 4.DiamFab (France), 5.Univ. Tsukuba (Japan))

2019 International Conference on Solid State Devices and Materials

[PS-4-13] Characterization of defects in diamond PiN diodes by electron beam induced current