Observation of Slow Carrier Recombination in p-type GaN Epilayers on GaN Substrates

S. Zhu

2019 International Conference on Solid State Devices and Materials

2019年9月2日〜 2019年9月5日
Nagoya University

11:27 〜 11:29

[PS-4-22] Observation of Slow Carrier Recombination in p-type GaN Epilayers on GaN Substrates

^○S. Zhu¹, K. Ito², K. Tomita², T. Narita², T. Kachi³, M. Kato^1,3 (1.Nagoya Inst. of Tech. (Japan), 2.Toyota Central R&D Labs. (Japan), 3.Nagoya Univ. (Japan))

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