11:35 〜 11:37

[PS-4-26 (Late News)] Modeling of the Leakage Current in GaN mediated through the Dislocation-Impurity Complex

^○Y. Harashima¹, T. Nakano², A. Oshiyama¹, K. Shiraishi^1,2 (1.IMaSS, Nagoya Univ. (Japan), 2.Department of Eng., Nagoya Univ. (Japan))