High current turn-off capability testing of a 3.3 kV SiC-MOSFET

2019 International Conference on Solid State Devices and Materials

Sep 2, 2019 - Sep 5, 2019
Nagoya University

11:37 AM - 11:39 AM

^○K. Takao¹, T. Sakano¹, Y. Hayashi¹, S. Hongliang¹ (1.Toshiba Corporation (Japan))