3:15 PM - 3:30 PM

[A-1-06] Design and Simulation of Highly-Efficient Metal-Ferroelectric-Nanosheet Line-Tunnel FETs for Sub-5-nm Technology Nodes

〇Narasimhulu Thoti¹, Yiming Li Li¹, Sekhar Reddy Kola¹, Seiji Samukawa² (1. National Chiao Tung Univ.(Taiwan), 2. Tohoku Univ.(Japan))

https://doi.org/10.7567/SSDM.2020.A-1-06