Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities

Hiroki Kanakogi

doi:https://doi.org/10.7567/SSDM.2020.A-4-02

11:30 AM - 11:45 AM

[A-4-02 (Late News)] Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities

〇Hiroki Kanakogi¹, Wei-Chen Wen¹, Keisuke Yamamoto¹, Dong Wang¹, Hiroshi Nakashima² (1. Interdisciplinary Graduate School of Engineering Sci., Kyushu Univ.(Japan), 2. Global Innovation Center, Kyushu Univ.(Japan))

https://doi.org/10.7567/SSDM.2020.A-4-02

2020 International Conference on Solid State Devices and Materials

[A-4-02 (Late News)] Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities