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[A-5-04] Variability and Corner Effect of GAA p-Type Poly-Si JunctionlessNanowire/Nanosheet Transistors

〇Min-Ju Ahn¹, Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1. Inst. of Indus. Sci., Univ. of Tokyo(Japan))

https://doi.org/10.7567/SSDM.2020.A-5-04