Millisecond Post Deposition Annealing for Improving the EOT and Dit in TiN/HfO2/SiO2/Si Gate Stacks using Flash Lamp Annealing

Hikaru Kawarazaki

doi:https://doi.org/10.7567/SSDM.2020.A-6-05

17:15 〜 17:30

[A-6-05] Millisecond Post Deposition Annealing for Improving the EOT and D_it in TiN/HfO₂/SiO₂/Si Gate Stacks using Flash Lamp Annealing

〇Hikaru Kawarazaki¹, Akitsugu Ueda¹, Shinichi Kato¹, Kento Izumi², Yasuo Nara² (1. SCREEN Semiconductor Solutions Co., Ltd.(Japan), 2. Univ. of Hyogo(Japan))

https://doi.org/10.7567/SSDM.2020.A-6-05

2020 International Conference on Solid State Devices and Materials

[A-6-05] Millisecond Post Deposition Annealing for Improving the EOT and Dit in TiN/HfO2/SiO2/Si Gate Stacks using Flash Lamp Annealing

[A-6-05] Millisecond Post Deposition Annealing for Improving the EOT and D_it in TiN/HfO₂/SiO₂/Si Gate Stacks using Flash Lamp Annealing