ON current enhancement and single-electron transport in tunnel FETs by a new isoelectronic trap impurity of beryllium

Yoshisuke Ban

doi:https://doi.org/10.7567/SSDM.2020.A-6-06

17:30 〜 17:45

[A-6-06] ON current enhancement and single-electron transport in tunnel FETs by a new isoelectronic trap impurity of beryllium

〇Yoshisuke Ban¹, Kimihiko Kato², Shota Iizuka², Satoshi Moriyama³, Koji Ishibashi¹, Keiji Ono¹, Takahiro Mori² (1. RIKEN(Japan), 2. AIST(Japan), 3. Tokyo Denki Univ. (TDU)(Japan))

https://doi.org/10.7567/SSDM.2020.A-6-06

2020 International Conference on Solid State Devices and Materials

[A-6-06] ON current enhancement and single-electron transport in tunnel FETs by a new isoelectronic trap impurity of beryllium