16:15 〜 16:30

[B-10-02] HfN Multi Charge Trapping Layers for Hf-based MONOS Nonvolatile Memory

〇Shun-ichiro Ohmi¹, Yusuke Horiuchi¹, Hiroki Morita¹, Akio Ihara¹, Jooyoung Pyo¹ (1. Tokyo Tech(Japan))

https://doi.org/10.7567/SSDM.2020.B-10-02