Resistive switching in two-terminal HfO<sub>2</sub>/SiO<sub>2</sub> stack with interface dipole modulation

16:15 〜 16:30

[B-2-02] Resistive switching in two-terminal HfO₂/SiO₂ stack with interface dipole modulation

〇Noriyuki - Miyata¹, Kyoko Sumita¹, Akira Yasui², Reito Wada³, Hiroshi Nohira³ (1. AIST(Japan), 2. JASRI(Japan), 3. Tokyo City University(Japan))