Over 230 fF/μm<sup>2</sup> capacitance density 9.0V breakdown voltage textured deep trench SiN capacitors toward 3D integration

Koga Saito

doi:https://doi.org/10.7567/SSDM.2020.C-4-02

11:30 〜 11:45

[C-4-02] Over 230 fF/μm² capacitance density 9.0V breakdown voltage textured deep trench SiN capacitors toward 3D integration

〇Koga Saito¹, Rihito Kuroda¹, Hiroshi Shibata², Taku Shibaguchi², Naoya Kuriyama², Shigetoshi Sugawa¹ (1. Tohoku University(Japan), 2. LAPIS Semiconductor Miyagi Co., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2020.C-4-02

2020 International Conference on Solid State Devices and Materials

[C-4-02] Over 230 fF/μm2 capacitance density 9.0V breakdown voltage textured deep trench SiN capacitors toward 3D integration

[C-4-02] Over 230 fF/μm² capacitance density 9.0V breakdown voltage textured deep trench SiN capacitors toward 3D integration