2:45 PM - 3:00 PM

[C-5-03] PdErSi Source and Drain for Schottky Barrier MOSFET with HfO₂ Gate Insulator Fabricated by Low Thermal Budget Gate-First Process

〇Rengie Mark Domincel Mailig¹, Yuichiro Aruga¹, Shun-ichiro Ohmi¹ (1. Tokyo Tech.(Japan))

https://doi.org/10.7567/SSDM.2020.C-5-03