1.2 A/mm Drain Current Density and 1.1 Ω mm Lowest Contact Resistance for 2DHG Diamond MOSFETs Using High Concentration Selective Regrowth B-doped Diamond

Yukiko Suzuki

doi:https://doi.org/10.7567/SSDM.2020.D-1-01

14:00 〜 14:15

[D-1-01] 1.2 A/mm Drain Current Density and 1.1 Ω mm Lowest Contact Resistance for 2DHG Diamond MOSFETs Using High Concentration Selective Regrowth B-doped Diamond

〇Yukiko Suzuki¹, Shoichiro Imanishi¹, Ken Kudara¹, Kiyotaka Horikawa¹, Shotaro Amano¹, Masayuki Iwataki¹, Aoi Morishita¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1. School of Fundamental Science & Engineering Waseda Univ.(Japan), 2. Kagami Memorial Research Inst. for Materials Science and Technology(Japan))

https://doi.org/10.7567/SSDM.2020.D-1-01

2020 International Conference on Solid State Devices and Materials

[D-1-01] 1.2 A/mm Drain Current Density and 1.1 Ω mm Lowest Contact Resistance for 2DHG Diamond MOSFETs Using High Concentration Selective Regrowth B-doped Diamond