The Japan Society of Applied Physics

14:00 〜 14:15

[D-1-01] 1.2 A/mm Drain Current Density and 1.1 Ω mm Lowest Contact Resistance for 2DHG Diamond MOSFETs Using High Concentration Selective Regrowth B-doped Diamond

〇Yukiko Suzuki1, Shoichiro Imanishi1, Ken Kudara1, Kiyotaka Horikawa1, Shotaro Amano1, Masayuki Iwataki1, Aoi Morishita1, Atsushi Hiraiwa1, Hiroshi Kawarada1,2 (1. School of Fundamental Science & Engineering Waseda Univ.(Japan), 2. Kagami Memorial Research Inst. for Materials Science and Technology(Japan))

https://doi.org/10.7567/SSDM.2020.D-1-01