The Japan Society of Applied Physics

14:30 〜 14:45

[D-1-03] Vertical-type 2DHG Diamond MOSFET; Achieve High Current Operation of -3.4 A by Expanding Gate Width

〇Naoya - Niikura1, Jun Tsunoda1, Masayuki Iwataki1, Kiyotaka Horikawa1, Syotaro Amano1, Atsushi Hiraiwa1, Hiroshi Kawarada1,2 (1. Waseda Univ.(Japan), 2. KMLMST(Japan))

https://doi.org/10.7567/SSDM.2020.D-1-03