Vertical-type 2DHG Diamond MOSFET; Achieve High Current Operation of -3.4 A by Expanding Gate Width

Naoya - Niikura

doi:https://doi.org/10.7567/SSDM.2020.D-1-03

14:30 〜 14:45

[D-1-03] Vertical-type 2DHG Diamond MOSFET; Achieve High Current Operation of -3.4 A by Expanding Gate Width

〇Naoya - Niikura¹, Jun Tsunoda¹, Masayuki Iwataki¹, Kiyotaka Horikawa¹, Syotaro Amano¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1. Waseda Univ.(Japan), 2. KMLMST(Japan))

https://doi.org/10.7567/SSDM.2020.D-1-03

2020 International Conference on Solid State Devices and Materials

[D-1-03] Vertical-type 2DHG Diamond MOSFET; Achieve High Current Operation of -3.4 A by Expanding Gate Width