Novel Si stacking on beta-Ga2O3 MOSFET structure enabling 0.59 mOhmcm2 of Ron,sp at 600V bloking voltage

15:00 〜 15:15

[D-1-05] Novel Si stacking on beta-Ga₂O₃MOSFET structure enabling 0.59 mOhmcm² of Ron,sp at 600V bloking voltage

〇Takashi Miida¹, Ikuo Kurachi², Kazuo Tanimoto¹, Kazuhiro Kawasiri¹ (1. EASTWIND, LLC.(Japan), 2. D&S, Inc.(Japan))