16:45 〜 17:00

[D-10-03] Zn-doped GaN Mesa Structure as a Gate for Normally-off AlGaN/GaN-HFET

〇Norikazu Ito¹, Taketoshi Tanaka¹, Ken Nakahara¹ (1. Rohm Co.,Ltd(Japan))

https://doi.org/10.7567/SSDM.2020.D-10-03