Large-Diameter 3C-SiC/Si Hetero-Epitaxial Substrates and Thick, High-Quality GaN Epitaxial Layers Grown on These Substrates for GaN Power Applications

Keisuke Kawamura

doi:https://doi.org/10.7567/SSDM.2020.D-10-04

17:00 〜 17:15

[D-10-04] Large-Diameter 3C-SiC/Si Hetero-Epitaxial Substrates and Thick, High-Quality GaN Epitaxial Layers Grown on These Substrates for GaN Power Applications

〇Keisuke Kawamura¹, Shigeomi Hishiki¹, Hiroki Uratani¹, Sumito Ouchi¹, Hiroki Suzuki¹, Yoshiki Sakaida¹, Koichi Kitahara¹, Hirokazu Goto¹, Ichiro Hide¹, Shuichi Kaneko², Osamu Machida², Toru Yoshie² (1. Air Water Inc.(Japan), 2. Sanken Electric Co., LTD(Japan))

https://doi.org/10.7567/SSDM.2020.D-10-04

2020 International Conference on Solid State Devices and Materials

[D-10-04] Large-Diameter 3C-SiC/Si Hetero-Epitaxial Substrates and Thick, High-Quality GaN Epitaxial Layers Grown on These Substrates for GaN Power Applications