Normally-off Recessed-gate ZrO<sub>2</sub>/AlGaN/GaN MIS-HEMTs with Regrown AlGaN Barrier

Itsuki Nagase

doi:https://doi.org/10.7567/SSDM.2020.D-10-07

17:45 〜 18:00

[D-10-07 (Late News)] Normally-off Recessed-gate ZrO₂/AlGaN/GaN MIS-HEMTs with Regrown AlGaN Barrier

〇Itsuki Nagase¹, Joel Tacla Asubar¹, Rui Shan Low¹, Shun Urano¹, Hirokuni Tokuda¹, Akio Yamamoto¹, Masaaki Kuzuhara² (1. University of Fukui(Japan), 2. Kwansei Gakuin University(Japan))

https://doi.org/10.7567/SSDM.2020.D-10-07

2020 International Conference on Solid State Devices and Materials

[D-10-07 (Late News)] Normally-off Recessed-gate ZrO2/AlGaN/GaN MIS-HEMTs with Regrown AlGaN Barrier

[D-10-07 (Late News)] Normally-off Recessed-gate ZrO₂/AlGaN/GaN MIS-HEMTs with Regrown AlGaN Barrier