The Japan Society of Applied Physics

16:30 〜 16:45

[D-2-02] Improvement of Channel Property of GaN Vertical Trench MOSFET by Compensating Nitrogen Vacancies with Nitrogen Plasma Treatment

〇Takashi Ishida1,2, Kyung Pil Nam1, Maciej Matys1, Tsutomu Uesugi1, Jun Suda1, Tetsu Kachi1 (1. Nagoya Univ.(Japan), 2. MIRISE Technologies Corp.(Japan))

https://doi.org/10.7567/SSDM.2020.D-2-02