Improvement of Channel Property of GaN Vertical Trench MOSFET by Compensating Nitrogen Vacancies with Nitrogen Plasma Treatment

Takashi Ishida

doi:https://doi.org/10.7567/SSDM.2020.D-2-02

16:30 〜 16:45

[D-2-02] Improvement of Channel Property of GaN Vertical Trench MOSFET by Compensating Nitrogen Vacancies with Nitrogen Plasma Treatment

〇Takashi Ishida^1,2, Kyung Pil Nam¹, Maciej Matys¹, Tsutomu Uesugi¹, Jun Suda¹, Tetsu Kachi¹ (1. Nagoya Univ.(Japan), 2. MIRISE Technologies Corp.(Japan))

https://doi.org/10.7567/SSDM.2020.D-2-02

2020 International Conference on Solid State Devices and Materials

[D-2-02] Improvement of Channel Property of GaN Vertical Trench MOSFET by Compensating Nitrogen Vacancies with Nitrogen Plasma Treatment