The Japan Society of Applied Physics

16:45 〜 17:00

[D-2-03] A High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High-Energy Fluorine Ion Implanted Guard Rings

〇Ruiyuan Yin1, Chiachia Li1, Bin Zhang1, Jinyan Wang1, Yunyi Fu1, Cheng Paul Wen1, YiLong Hao1, Bo Shen2, Maojun Wang1 (1. Inst. of Microelectronics, Peking Univ.(China), 2. School of Physics, Peking Univ.(China))

https://doi.org/10.7567/SSDM.2020.D-2-03