A High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High-Energy Fluorine Ion Implanted Guard Rings

Ruiyuan Yin

doi:https://doi.org/10.7567/SSDM.2020.D-2-03

16:45 〜 17:00

[D-2-03] A High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High-Energy Fluorine Ion Implanted Guard Rings

〇Ruiyuan Yin¹, Chiachia Li¹, Bin Zhang¹, Jinyan Wang¹, Yunyi Fu¹, Cheng Paul Wen¹, YiLong Hao¹, Bo Shen², Maojun Wang¹ (1. Inst. of Microelectronics, Peking Univ.(China), 2. School of Physics, Peking Univ.(China))

https://doi.org/10.7567/SSDM.2020.D-2-03

2020 International Conference on Solid State Devices and Materials

[D-2-03] A High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High-Energy Fluorine Ion Implanted Guard Rings