On-resistance and Breakdown-Phenomenon Dependences on Threading Dislocations in Vertical p-n Junction Diodes

Hiroshi - Ohta

doi:https://doi.org/10.7567/SSDM.2020.D-2-04

17:00 〜 17:15

[D-2-04] On-resistance and Breakdown-Phenomenon Dependences on Threading Dislocations in Vertical p-n Junction Diodes

〇Hiroshi - Ohta¹, Naomi - Asai¹, Fumimasa - Horikiri², Yoshinobu - Narita², Takehiro - Yoshida², Tomoyoshi - Mishima¹ (1. Hosei Univ.(Japan), 2. SCIOCS Co., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2020.D-2-04

2020 International Conference on Solid State Devices and Materials

[D-2-04] On-resistance and Breakdown-Phenomenon Dependences on Threading Dislocations in Vertical p-n Junction Diodes