The Japan Society of Applied Physics

17:15 〜 17:30

[D-2-05] Improvement of Contacts on Etched p-type GaN by Low-bias ICP–RIE

〇Takeru Kumabe1, Yuto Ando1, Hirotaka Watanabe2, Yoshio Honda2, Manato Deki1,3, Atsushi Tanaka2,4, Shugo Nitta2, Hiroshi Amano2,3,4,5 (1. Grad. Sch. of Eng. Nagoya Univ.(Japan), 2. IMaSS Nagoya Univ.(Japan), 3. VBL Nagoya Univ.(Japan), 4. NIMS(Japan), 5. ARC Nagoya Univ.(Japan))

https://doi.org/10.7567/SSDM.2020.D-2-05