17:15 〜 17:30

[D-2-05] Improvement of Contacts on Etched p-type GaN by Low-bias ICP–RIE

〇Takeru Kumabe¹, Yuto Ando¹, Hirotaka Watanabe², Yoshio Honda², Manato Deki^1,3, Atsushi Tanaka^2,4, Shugo Nitta², Hiroshi Amano^2,3,4,5 (1. Grad. Sch. of Eng. Nagoya Univ.(Japan), 2. IMaSS Nagoya Univ.(Japan), 3. VBL Nagoya Univ.(Japan), 4. NIMS(Japan), 5. ARC Nagoya Univ.(Japan))

https://doi.org/10.7567/SSDM.2020.D-2-05