The Japan Society of Applied Physics

17:30 〜 17:45

[D-2-06] Mapping of Photoelectrochemical Etched Ni/GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy -- Comparison between n- and p-type GaN samples --

〇Ryo Matsuda1, Fumimasa Horikiri2, Yoshinobu Narita2, Takehiro Yoshida2, Noboru Fukuhara2, Tomoyoshi Mishima3, Kenji Shiojima1 (1. Univ. of Fukui(Japan), 2. SCIOCS(Japan), 3. Hosei Univ.(Japan))

https://doi.org/10.7567/SSDM.2020.D-2-06