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[D-4-01] Accurate Determination of Barrier Heights in Heavily-Doped SiC Schottky Barrier Diodes Fabricated with Various Metals

〇Masahiro Hara¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1. Kyoto Univ.(Japan))

https://doi.org/10.7567/SSDM.2020.D-4-01