Lateral spreads of Al and P atoms implanted into a high-purity semi-insulating SiC substrate

11:30 〜 11:45

[D-4-03] Lateral spreads of Al and P atoms implanted into a high-purity semi-insulating SiC substrate

〇Qimin Jin¹, Masashi Nakajima¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1. Kyoto University(Japan))