Development of Analytical Channel Mobility Model Based on Study of Universal Mobility in SiC MOSFET

12:15 〜 12:30

[D-4-06 (Late News)] Development of Analytical Channel Mobility Model Based on Study of Universal Mobility in SiC MOSFET

〇Teruyuki Ohashi¹, Ryosuke Iijima¹, Hiroshi Yano² (1. Toshiba Corp.(Japan), 2. Univ. of Tsukuba(Japan))