Impact of Growth Direction on Crystal Quality and DC Characteristics of In(Ga)P/InGaAsSb DHBTs Transferred onto SiC Substrate

2:15 PM - 2:30 PM

[D-5-02] Impact of Growth Direction on Crystal Quality and DC Characteristics of In(Ga)P/InGaAsSb DHBTs Transferred onto SiC Substrate

〇Takuya Hoshi¹, Yuta Shiratori¹, Hiroki Sugiyama¹, Hideaki Matsuzaki¹ (1. NTT Device Technology Labs., NTT Corp.(Japan))