Reactions of NO molecule with carbon-related defects at 4H-SiC/SiO<sub>2</sub> interface under dry oxidation conditions

Tsunashi Shimizu

doi:https://doi.org/10.7567/SSDM.2020.D-6-03

16:45 〜 17:00

[D-6-03] Reactions of NO molecule with carbon-related defects at 4H-SiC/SiO₂ interface under dry oxidation conditions

〇Tsunashi Shimizu¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹, Hiroyuki Kageshima², Masashi Uematsu³, Kenji Shiraishi⁴ (1. Mie Univ.(Japan), 2. Shimane Univ.(Japan), 3. Keio Univ.(Japan), 4. Nagoya Univ.(Japan))

https://doi.org/10.7567/SSDM.2020.D-6-03

2020 International Conference on Solid State Devices and Materials

[D-6-03] Reactions of NO molecule with carbon-related defects at 4H-SiC/SiO2 interface under dry oxidation conditions

[D-6-03] Reactions of NO molecule with carbon-related defects at 4H-SiC/SiO₂ interface under dry oxidation conditions