17:00 〜 17:15

[D-6-04] Free carrier density enhancement of 4H-SiC Si-face MOSFET by Ba diffusion process and NO passivation

〇Shogo Sekine¹, Masakazu Okada², Teruaki Kumazawa², Mitsuru Sometani², Hirohisa Hirai², Naoya Serizawa¹, Ryu Hasunuma¹, Mitsuo Okamoto², Shinsuke Harada² (1. Univ. of Tsukuba(Japan), 2. Inst. Advanced Industrial Science and Technology(Japan))

https://doi.org/10.7567/SSDM.2020.D-6-04