5:15 PM - 5:30 PM

[D-6-05] Comparison of Field Effect Mobility Enhancement by Different Oxidation Processes at 4H-SiC a-face MOS Interface

〇Mitsuru Sometani¹, Hirohisa Hirai¹, Mitsuo Okamoto¹, Tetsuo Hatakeyama^1,2, Shinsuke Harada¹, Hajime Okumura¹, Hiroshi Yamaguchi¹ (1. AIST(Japan), 2. Toyama Pref. Univ.(Japan))

https://doi.org/10.7567/SSDM.2020.D-6-05